IP3 2023 – Semiconductor Manufacturing 4 (LOT 13790)

This lot is generally related to manufacturing of a semiconductor device to increase a yield of device manufacturing process and prevent deterioration due to the oxygen diffusion. Disclosed is a semiconductor device consisting of a substrate, a gate dielectric film formed on the substrate, a gate electrode formed on the gate dielectric film, source and drain electrodes. The system has an interlayer insulation film which covers the gate electrode, the source, drain electrodes and formed with contact holes filled with a conductive material to form contacts. Also disclosed is a boundary between the gate dielectric film, and the substrate is formed with a fluorine terminated surface which serves as a barrier for preventing oxygen diffusion. The technology may be implemented in a semiconductor device manufacturing process, fabrication of ICs, etc.